PaperElectronic structure in confined volumes using spatially resolved electron energy loss scatteringP.E. BatsonMaterials Science and Engineering B
Conference paperBand-edge high-performance high-κ /metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyondV. Narayanan, V.K. Paruchuri, et al.VLSI Technology 2006
PaperStructure, chemistry and bonding at grain boundaries in Ni3Al - I. The role of boron in ductilizing grain boundariesD.A. Muller, S. Subramanian, et al.Acta Materialia
PaperParticipation of carbon in the electronic structure of YBa2Cu3O7P.E. Batson, T.M. Shaw, et al.Physical Review B
