Conference paper
Breakdown measurements of ultra-thin SiO2 at low voltage
J.H. Stathis, A. Vayshenker, et al.
VLSI Technology 2000
The polarity dependence observed for destructive breakdown of ultrathin silicon dioxide films is shown to be directly correlated to the oxide degradation caused by hot-electron-induced defect production. The probability of defect generation is also demonstrated to depend on the Fermi level position at the anode/oxide interface. The specific anode interface, whether substrate/oxide or gate/oxide, is shown to have no direct relationship to the degradation rate. © 1996 American Institute of Physics.
J.H. Stathis, A. Vayshenker, et al.
VLSI Technology 2000
P.C. Arnett, D.J. DiMaria
Applied Physics Letters
D.J. DiMaria, D.W. Dong
IEEE T-ED
D.J. DiMaria, E. Cartier, et al.
Journal of Applied Physics