Aaron D. Franklin, Zhihong Chen
Nature Nanotechnology
In this letter, we demonstrate a gate-all-around single-wall carbon nanotube field-effect transistor. This is the first successful experimental implementation of an off-chip gate and gate-dielectric assembly with subsequent deposition on a suitable substrate. The fabrication process and device measurements are discussed in the letter. We also argue in how far charges in the gate oxide are responsible for the observed nonideal device performance. © 2008 IEEE.
Aaron D. Franklin, Zhihong Chen
Nature Nanotechnology
Satoshi Oida, Fenton R. McFeely, et al.
Physical Review B - CMMP
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IEDM 2009
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IEEE Electron Device Letters