Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
We report a study of the effects of large, external uniaxial stress (T) along [001] and [110] on the optical properties of a strained layer (001) In0.21Ga0.79As/GaAs single quantum well. For T [110] we have observed a red shift of several peaks and an increase in the intensities of several symmetry-forbidden transitions; effects not seen for T [100]. This phenomenon is due to an electric field along [001] induced by the piezoelectric coupling for T [110]. © 1991 The American Physical Society.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
Julien Autebert, Aditya Kashyap, et al.
Langmuir
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics