Marcelo A. Kuroda, Jerry Tersoff, et al.
Nano Letters
Fabrication of Si-Ge nanowire heterostructures offers great design flexibility in device applications, provided the interfaces are defect-free and compositionally abrupt. We use in-situ transmission electron microscopy to study nanowire growth, and find that abrupt Si-Ge interfaces can be fabricated in nanowires by a growth method that uses a solid AlAu2 catalyst. Growth of uniform segments of SiGe alloy in Si nanowires with sharp interfaces can also be realized using this method. We present in-situ measurements of nanowire growth kinetics and discuss the strain distribution and thermal stability in Si/Ge and Si/Ge/Si nanowire junction structures. ©The Electrochemical Society.
Marcelo A. Kuroda, Jerry Tersoff, et al.
Nano Letters
B.J. Spencer, Jerry Tersoff
Applied Physics Letters
Emanuel Tutuc, Joerg Appenzeller, et al.
Nano Letters
Z.Y. Zhou, W.X. Tang, et al.
Applied Physics Letters