Dual work function metal gate CMOS using CVD metal electrodes
V. Narayanan, A.C. Callegari, et al.
VLSI Technology 2004
Laterally gated three-terminal resonant tunneling devices have been fabricated from Si/Si1-xGex double-barrier structures grown by atmospheric pressure chemical vapor deposition. The gate is insulated from the submicrometer vertical channel by a low-temperature oxide and the entire fabrication scheme is compatible with current silicon technology. At T=77 K the resonant peak current can be modulated by 25% by applying a moderate gate voltage; at T=4.2 K, current modulation reaches 50%. We present calculations demonstrating that devices fabricated from optimized Si/Si1-xGe x structures will pinch off fully at moderate gate voltages and operate at liquid nitrogen temperatures.
V. Narayanan, A.C. Callegari, et al.
VLSI Technology 2004
K.R. Milkove
International Symposium on Integrated Ferroelectrics 1998
K.R. Milkove, J. Coffin, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
M. Colburn, S.V. Nitta, et al.
AMC 2003