Electrical characteristics of ultra-thin multi-layers of poly-Si and silicon dioxide
- K.K. Chan
- Y.H. Lee
- et al.
- 1994
- MRS Fall Meeting 1994
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38 results for Y.H. Lee
High-performance 0.07-μm CMOS with 9.5-ps gate delay and 150 GHz fT
- Clement Wann
- Fariborz Assaderaghi
- et al.
- 1997
- IEEE Electron Device Letters
Room temperature operation of a quantum-dot flash memory
- J.J. Welser
- Sandip Tiwari
- et al.
- 1997
- IEEE Electron Device Letters
Ultra-thin, highly uniform thin film SOI MOSFET with low series resistance using pattern-constrained epitaxy (PACE)
- H.-S. Wong
- K.K. Chan
- et al.
- 1996
- VLSI Technology 1996
Surface damage threshold of Si and Si02 in electron-cyclotron-resonance plasmas
- Young H. Lee
- 1992
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
RADIAL DISTRIBUTION OF OXYGEN MOLECULAR IONS IN DIODE REACTOR.
- Y.H. Lee
- P.R. Brosious
- 1986
- Symposium on Plasma Processing 1986
HEATING EFFECT IN HIGHLY CONDUCTING MATERIALS DURING PLASMA ETCHING.
- Y.H. Lee
- M. Chen
- 1983
- ECS Meeting 1983
STUDY OF SILICON CONTAMINATION AND NEAR-SURFACE DAMAGE CAUSED BY CF//4/H//2 REACTIVE ION ETCHING.
- G.S. Oehrlein
- R.M. Tromp
- et al.
- 1983
- ECS Meeting 1983
ETCH ANISOTROPY OF UNDOPED POLYSILICON FILMS.
- D. Favreau
- M. Chen
- et al.
- 1983
- ECS Meeting 1983
Near-Surface Damage and Contamination after CF4/H2 Reactive Ion Etching of Si
- G.S. Oehrlein
- R.M. Tromp
- et al.
- 2019
- JES