Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
Paper
Far-infrared absorption by excitons in silicon
Abstract
We report on the first observation of 1s to 2p absorption by excitons in pure silicon. A group of strong lines at 10.2, 11.4 and 12.0 meV is observed along with a continuum extending to higher frequency. A theoretical model for the excitonic absorption accounts well for the observed structure. © 1978.
Related
John G. Long, Peter C. Searson, et al.
JES
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules