Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
Steady state and switching behavior of single luminescence filaments in a-BaTiO3/ZnS/a-BaTiO3 ac thin film electroluminescence devices have been studied. The brightness-voltage amplitude hysteresis, or memory effect, of these devices results from the ensemble behavior of luminescing filaments that are bistable in their luminescence level. A trap depth of 1-1.2eV is estimated on the assumption that the voltage threshold for luminescence involves electric field emission from traps. The temperature dependence of electroluminescence near the threshold voltage is investigated. © 1979 AIME.
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering