Benjamin G. Lee, Aleksandr Biberman, et al.
IEEE Journal on Selected Topics in Quantum Electronics
The design and demonstration of photonic grating couplers with improved efficiencies monolithically integrated in IBM's 7RF silicon-on-insulator (SoI) complementary metal-oxide-semiconductor (CMOS) technology offering are reported. The grating couplers are fabricated using two standard layers available in 7RF SoI CMOS, where focusing circular grating structures and a small-footprint tapered slab are fabricated on the poly-silicon and crystalline-silicon (c-Si) layers, respectively. The coupling efficiencies for 1.3- and 1.55-μm grating couplers are measured to be -2.8 and -3.8 dB, respectively. These results are at least 2× more efficient than the best previously reported grating couplers in this technology, which were fabricated using c-Si layers only. Furthermore, the devices exhibit 1-dB bandwidths of ∼40 and 52 nm for 1.3 and 1.55μm, respectively. © 2014 IEEE.
Benjamin G. Lee, Aleksandr Biberman, et al.
IEEE Journal on Selected Topics in Quantum Electronics
Alexander V. Rylyakov, Jonathan E. Proesel, et al.
IEEE JSSC
Benjamin G. Lee, Joris Van Campenhout, et al.
CLEO/QELS 2010
Benjamin G. Lee, Jonathan E. Proesel, et al.
IPC 2012