K.N. Tu, G. Ottaviani, et al.
Journal of Applied Physics
Interfacial reaction in bilayers of amorphous Si and crystalline Rh thin films has been studied by transmission electron diffraction and microscopy. In a bilayer of ∼190-Å amorphous Si and ∼60-Å polycrystalline Rh films, we have observed the formation of an amorphous Rh-Si alloy film upon thermal annealing at 300°C. The amorphous alloy film crystallizes into the RhSi phase at 400°C. On the other hand, no amorphous alloy formation was observed upon annealing a bilayer of ∼150-Å amorphous Si and ∼100-Å polycrystalline Rh films; instead, they react at 300°C to form Rh2Si, followed by the formation of RhSi or a mixture of RhSi and Rh5Si3 around 400°C.
K.N. Tu, G. Ottaviani, et al.
Journal of Applied Physics
S. Valeri, U. del Pennino, et al.
Solid State Communications
H.T.G. Hentzell, R.D. Thompson, et al.
Materials Letters
K.-L. Lee, C.-K. Hu, et al.
Journal of Applied Physics