T. Ando, M.M. Frank, et al.
IEDM 2009
We have formed compositionally abrupt interfaces in silicon-germanium (Si-Ge) and Si-SiGe heterostructure nanowires by using solid aluminum-gold alloy catalyst particles rather than the conventional liquid semiconductor-metal eutectic droplets. We demonstrated single interfaces that are defect-free and close to atomically abrupt, as well as quantum dots (i.e., Ge layers tens of atomic planes thick) embedded within Si wires. Real-time imaging of growth kinetics reveals that a low solubility of Si and Ge in the solid particle accounts for the interfacial abruptness. Solid catalysts that can form functional group IV nanowire-based structures may yield an extended range of electronic applications. Copyright 2009 by the American Association for the Advancement of Science; all rights reserved.
T. Ando, M.M. Frank, et al.
IEDM 2009
F.M. Ross, M. Kammler, et al.
Microscopy and Microanalysis
M. Breitwisch, T. Nirschl, et al.
VLSI Technology 2007
A.W. Denier van der Gon, R.M. Tromp, et al.
Thin Solid Films