Formation of Si:CP layer through in-situ doping and implantation process for n-type metal-oxide-semiconductor devices

Paper

30 Apr 2014

Abstract

In this study, the effect of Cluster Carbon implantation and thermal annealing for recrystallization on the properties of phosphorus doped Si (Si

Paper

R.M. Macfarlane, R.L. Cone

Physical Review B - CMMP

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SPIE AeroSense 1997