Hot carrier reliability in ultra-scaled sige channel p-FinFETs
Miaomiao Wang, X. Miao, et al.
ASICON 2017
Charge pumping is one of the most relied techniques used to quantify interface defects in metal-oxide-semiconductor devices. However, conventional charge pumping is easily hindered by excessive gate leakage currents, which render the technique unsuitable for advanced technology nodes. We demonstrate a new frequency-modulated charge pumping methodology in which we transform the quasi-dc charge pumping measurement into an ac measurement. The ac detection scheme is highly resistant to gate leakage currents and extends the usefulness of charge pumping as a defect monitoring tool for future technologies.
Miaomiao Wang, X. Miao, et al.
ASICON 2017
Choonghyun Lee, Shogo Mochizuki, et al.
IEDM 2017
Richard G. Southwick, Miaomiao Wang, et al.
VLSI Technology 2019
Daniel C. Edelstein, M. Rizzolo, et al.
IEDM 2020