Dependence of post-breakdown conduction on gate oxide thickness
S. Lombardo, J.H. Stathis, et al.
Microelectronics Reliability
Ultra-thin oxide reliability has become an important issue in integrated circuit scaling. Present reliability methodology stresses oxides with a low impedance voltage source. This, though, does not represent the stress under circuit configurations, in which transistors are driven by other transistors. A Current Limited Constant Voltage Stress simulates circuit stress well. Limiting the current during the breakdown event reduces the post-breakdown conduction. Limiting the current to a sufficiently low value may prevent device failure, altogether.
S. Lombardo, J.H. Stathis, et al.
Microelectronics Reliability
S. Lombardo, F. Crupi, et al.
Annual Proceedings - Reliability Physics (Symposium)
F. Palumbo, S. Lombardo, et al.
Microelectronic Engineering
R. Rodríguez, J.H. Stathis, et al.
IEEE Electron Device Letters