Yves Martin, Jason S. Orcutt, et al.
ECTC 2019
In this paper, an overview and assessment of high-performance receivers based upon Ge-on-silicon-on-insulator (Ge-on-SOI) photodiodes and Si CMOS amplifier ICs is provided. Receivers utilizing Ge-on-SOI lateral p-i-n photodiodes paired with high-gain CMOS amplifiers are shown to operate at 15 Gb/s with a sensitivity of -7.4 dBm (BER = 10-12 while utilizing a single supply voltage of only 2.4 V. The 5-Gb/s sensitivity of similar receivers is constant up to 93 °C, and 10-Gb/s operation is demonstrated at 85 °C. Error-free BER < 10-12 operation of receivers combining a Ge-on-SOI photodiode with a single-ended high-speed receiver front end is demonstrated at 19 Gb/s, using a supply voltage of 1.8 V. In addition, receivers utilizing Ge-on-SOI photodiodes integrated with a low-power CMOS IC are shown to operate at 10 Gb/s using a single 1.1-V supply while consuming only 11 mW of power. A perspective on the future technological capabilities and applications of Ge-detector/Si-CMOS receivers is also provided. © 2007 IEEE.
Yves Martin, Jason S. Orcutt, et al.
ECTC 2019
Anuj Madan, Jiong Jiong Mo, et al.
RADECS 2009
Huapu Pan, Solomon Assefa, et al.
CLEO 2012
Daniel M. Kuchta, Alexander V. Rylyakov, et al.
IPC 2012