Current challenges in Ge MOS technology
A. Dimoulas, M. Houssa, et al.
ECS Meeting 2006
Electrical data on ZrO2 / GeO2 stacks prepared by atomic oxygen beam deposition on Ge at 225 °C reveal a relatively weak dependence of the stack equivalent oxide thickness upon the ZrO2 thickness. This trend points to a very high zirconia dielectric permittivity (k) value which is estimated to be around 44. This is indicative of zirconia crystallization into a tetragonal phase which is also supported by x-ray diffraction data. X-ray photoelectron spectroscopy analysis is in line with the assumption that due to a finite GeO2 decomposition, Ge is incorporated into the growing ZrO2, thus, stabilizing the high- k tetragonal phase. © 2008 American Institute of Physics.
A. Dimoulas, M. Houssa, et al.
ECS Meeting 2006
A. Dimoulas, Y. Panayiotatos, et al.
ECS Meeting 2008
G. Mavrou, P. Tsipas, et al.
Applied Physics Letters
J.W. Seo, Ch. Dieker, et al.
Microelectronic Engineering