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Growth investigations of 1.3 μm GaInAsP/InP MQW laser diodes grown by chemical beam epitaxy
Abstract
We report on growth investigations and results of low threshold current density GaInAsP/InP multiple quantum well (MQW) lasers emitting at a wavelength of 1.3 μm. Bulk layers and separate confinement heterostructure MQW laser diodes were grown by chemical beam epitaxy. At optimized growth conditions, broad-area lasers with as low a threshold current density Jth as 160 A/cm2 and an internal loss of 5 cm-1 were obtained. © 1993.
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