S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
Recent experimental results of InAs quantum wells clad with GaSb are described. It is shown that high quality GaSb is critical to the formation of the electron-hole system. The same results also apply to quantum wells with GaSb ternary alloys, where the densities of carrier can be controlled by varying the alloy composition. © 1989.
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009