C.T. Chuang, G.P. Li, et al.
ECS Meeting 1984
Heterojunction bipolar transistors with hydrogenated amorphous silicon (a-Si) contact layers on crystalline silicon (c-Si) substrates are reported. In particular, current gains exceeding 500 were achieved by heterojunction contacts further including embedded homo-junctions comprised of hydrogenated crystalline silicon (c-Si), having thicknesses much shorter than the diffusion length of minority carriers. The a-Si and c-Si layers were grown by plasma-enhanced chemical vapour deposition at temperatures close to 200°C. © 2012 The Institution of Engineering and Technology.
C.T. Chuang, G.P. Li, et al.
ECS Meeting 1984
T.H. Ning, C.M. Osburn, et al.
Journal of Electronic Materials
T.H. Ning
Journal of Applied Physics
G. Shahidi, J. Warnock, et al.
VLSI Technology 1993