Ho-Cheol Kim, Joy Cheng, et al.
SPIE Advanced Lithography 2007
We combine nanometer-scale polymer self assembly with advanced semiconductor microfabrication to produce metaloxide-semiconductor (MOS) capacitors with accumulation capacitance more than 400% higher than planar devices of the same lateral area. The self assembly technique achieves this degree of enhancement using only standard processing techniques, thereby obviating additional process complexity. These devices are suitable for use as on-chip power supply decoupling capacitors, particularly in high-performance silicon-on-insulator technology. © 2004 IEEE.
Ho-Cheol Kim, Joy Cheng, et al.
SPIE Advanced Lithography 2007
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
Solomon Assefa, Fengnian Xia, et al.
OECC 2009
Jakub Kedzierski, Diane Boyd, et al.
IEDM 2003