Nitride etching with hydrofluorocarbons. I. Selective etching of nitride over silicon and oxide materials by gas discharge optimization and selective deposition of fluorocarbon polymer
- Sebastian U. Engelmann
- Robert L. Bruce
- et al.
- 2017
- JVSTB
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24 results for Edmund M. Sikorski
Application of cyclic fluorocarbon/argon discharges to device patterning
- Dominik Metzler
- Kishore Uppireddi
- et al.
- 2016
- JVSTA
Patterning of CMOS device structures for 40-80nm pitches and beyond
- Sebastian U. Engelmann
- R.M. Martin
- et al.
- 2012
- SPIE Advanced Lithography 2012
Sub-30 nm pitch line-space patterning of semiconductor and dielectric materials using directed self-assembly
- Hsin-Yu Tsai
- Hiroyuki Miyazoe
- et al.
- 2012
- Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
A 0.021 μm2 trigate SRAM cell with aggressively scaled gate and contact pitch
- Michael A. Guillorn
- Josephine Chang
- et al.
- 2011
- VLSI Technology 2011
Trigate 6T SRAM scaling to 0.06 μm2
- M. Guillorn
- J. Chang
- et al.
- 2009
- IEDM 2009
Demonstration of highly scaled FinFET SRAM cells with high-Κ/metal gate and investigation of characteristic variability for the 32 nm node and beyond
- H. Kawasaki
- M. Khater
- et al.
- 2008
- IEDM 2008
Plasma etching of nanometer-scale self-assembled features
- Ying Zhang
- Charles T. Black
- et al.
- 2008
- ISTC 2008
FinFET performance advantage at 22nm: An AC perspective
- M. Guillorn
- J. Chang
- et al.
- 2008
- VLSI Technology 2008
Controlling linewidth roughness in step and flash imprint lithography
- Gerard M. Schmid
- Niyaz Khusnatdinov
- et al.
- 2008
- EMLC 2008