John G. Long, Peter C. Searson, et al.
JES
Carbon nanotubes have potential in the development of high-speed and power-efficient logic applications1-7. However, for such technologies to be viable, a high density of semiconducting nanotubes must be placed at precise locations on a substrate. Here, we show that ion-exchange chemistry can be used to fabricate arrays of individually positioned carbon nanotubes with a density as high as 1 × 109 cm-2 - two orders of magnitude higher than previous reports8,9. With this approach, we assembled a high density of carbon-nanotube transistors in a conventional semiconductor fabrication line and then electrically tested more than 10,000 devices in a single chip. The ability to characterize such large distributions of nanotube devices is crucial for analysing transistor performance, yield and semiconducting nanotube purity. Copyright © 2012 Macmillan Publishers Limited.
John G. Long, Peter C. Searson, et al.
JES
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
Robert W. Keyes
Physical Review B