S. Voldman, P. Juliano, et al.
Annual Proceedings - Reliability Physics (Symposium)
We report high hole mobility in modulation-doped SiGe alloys with Ge content up to 80%. The layers which are grown using ultrahigh-vacuum chemical vapor deposition are of high crystalline quality, have smooth surfaces, and have a low density of misfit dislocations. As a result of strain and high Ge content, we have measured hole mobilities in the range of 800-1050 cm 2/V s at room temperature, and 3300-3500 cm2/V s at 77 K. The corresponding two-dimensional sheet hole density is about 3×10 12 cm-2. Those numbers are, to our knowledge, the highest numbers ever reported for a SiGe alloy. The resistivity of this two-dimensional hole channel at room temperature is, to our knowledge, the lowest for any p-type semiconductor quantum well.
S. Voldman, P. Juliano, et al.
Annual Proceedings - Reliability Physics (Symposium)
B.S. Meyerson, K. Ismail, et al.
Semiconductor Science and Technology
B.S. Meyerson, M.L. Yu
International Conference on Chemical Vapor Deposition 1983
A. Sadek, K. Ismail, et al.
IEEE Transactions on Electron Devices