PaperTheoretical calculation of distribution coefficients of impurities in germanium and silicon, heats of solid solutionKurt WeiserJournal of Physics and Chemistry of Solids
PaperGated Hall effect measurements in high-mobility n-type Si/SiGe modulation-doped heterostructuresK. Ismail, M. Arafa, et al.Applied Physics Letters
PaperSequential single-phonon emission in GaAs-AlxGa1-xAs tunnel junctionsT.W. Hickmott, P. Solomon, et al.Physical Review Letters
