Conference paper
Nucleation of dislocations in SiGe layers
P.M. Mooney, F. Legoues, et al.
MRS Fall Meeting 1993
Enhancement-mode Si/SiGe n-type modulationdoped transistors with a 0.5-μm-length T-gate have been fabricted. Peak transconductances of 390 mS/mm at room temperature and 520 mS/mm at 77 K have been achieved. These high values are attributable to a combination of the high quality of the material used, having a room temperature mobility of 2600 cm2/V •s at an electron sheet concentration of 1.5 × 1012 cm2, and an optimized layer design that minimizes the parasitic series resistance and the gate-to-channel distance. © 1993 IEEE
P.M. Mooney, F. Legoues, et al.
MRS Fall Meeting 1993
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