S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
Field effect transistors are reaching the limits imposed by the scaling of materials and the electrostatic gating physics underlying the device. In this Communication, a new type of switch based on different physics, which combines known piezoelectric and piezoresistive materials, is described and is shown by theory and simulation to achieve gigahertz digital switching at low voltage (0.1 V). Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
David B. Mitzi
Journal of Materials Chemistry
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters