W.-Y. Lee, V.Y. Lee, et al.
Applied Physics Letters
Thin films of YBa2Cu3O7-x were deposited on Si substrates at 600-700°C by dc magnetron sputtering from a stoichiometric oxide target. Resistivity measurement results indicate that these films are superconducting with a zero resistance Tc as high as 76 K, without further high-temperature post-annealing treatments. These films give both core and valence-band x-ray photoemission, and x-ray diffraction spectra similar to those for superconducting films prepared with a high-temperature post-annealing step. No significant diffusion of Si from the substrate into the film was detected for the films deposited at 650°C or lower, according to depth profiles obtained using secondary ion mass spectrometry.
W.-Y. Lee, V.Y. Lee, et al.
Applied Physics Letters
C.S. Yannoni, R.D. Johnson, et al.
Journal of Physical Chemistry
J.B. Torrance, A. Girlando, et al.
Physical Review Letters
P.M. Grant, R. Beyers, et al.
Physical Review B