A single-chip 200Mb/s fiber optic receiver circuit
Dennis L. Rogers
ISSCC 1981
High-speed interdigitated metal-semiconductor-metal (IMSM) detectors have been fabricated on non-lattice-matched, semiinsulating, GaAs substrates using two GalnAs layers of differing indium concentrations to accommodate most of the lattice mismatch via interface misfit dislocations. Bandwidths as high as 3 GHz were measured with none of the detrimental low-frequency gain usually observed in this type of device. This is attributed to the inhibition of the surface trapping of photoinduced carriers by means of a graded pseudomorphic layer at the surface. © 1988 IEEE.
Dennis L. Rogers
ISSCC 1981
X. Yin, H.-M. Chen, et al.
Applied Physics Letters
S. Chang, I.M. Vitomirov, et al.
Physical Review B
L.J. Brillson, M.L. Slade, et al.
Applied Physics Letters