A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
We measure the spectrum and efficiency of the infrared light emission from ambipolar carbon nanotube field-effect transistors. The width of the emission peak is strongly device-structure dependent. Long devices (∼50 μm) show narrow spectral peaks that we attribute to relaxed carrier recombination, while short devices (∼500 nm) show broad peaks due to hot carrier recombination. The hot carrier distribution is limited to energies below the energies of the optical/zone boundary phonons near 180 meV. The efficiency of the radiative recombination is between 10-6 and 10-7 photons/electron-hole pair, and the possible quenching mechanisms are discussed.
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
Julien Autebert, Aditya Kashyap, et al.
Langmuir
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
J. Tersoff
Applied Surface Science