Electrical characterization of 3D Through-Silicon-Vias
Fei Liu, Xiaoxiong Gu, et al.
ECTC 2010
It is demonstrated that pre-existing silicon dangling bonds in Al-gate metal-oxide-semiconductor capacitors on (111) silicon substrates are passivated during hot-electron stress, while defects - of an as yet unidentified nature - are simultaneously generated. This degradation behavior mimics the interface degradation caused by atomic hydrogen from a remote plasma, suggesting that hydrogen release by hot electrons leads to interface degradation, but the silicon dangling bond is not the dominant interface defect. © 1996 American Institute of Physics. [S0003695196017275].
Fei Liu, Xiaoxiong Gu, et al.
ECTC 2010
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Microlithography 1999
E. Cartier, D.J. DiMaria
Microelectronic Engineering
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IEDM 2011