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Measurement of barrier heights in high permittivity gate dielectric films
Abstract
Based on theoretical studies of tunneling current phenomenon, a method for measuring barrier heights in metal-oxide-semiconductor structures is illustrated. Using this method, barrier heights associated with the Al 2O3 gate dielectric films are investigated. Also, the main conduction mechanism in Al2O3 gate dielectric films is identified to be tunneling. © 2002 American Institute of Physics.
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