PaperMonte Carlo Modeling of the Transport of Ionizing Radiation Created Carriers in Integrated CircuitsG.A. Sai-Halasz, M.R. WordemanIEEE Electron Device Letters
Conference paperA self-aligned inverse-T gate fully overlapped LDD device for sub-half micron CMOSD.S. Wen, C.C.-H. Hsu, et al.IEDM 1989
Conference paper220 mm2 4 and 8 bank 256 Mb SDRAM with single-sided stitched WL architectureT. Kirihata, M. Gall, et al.ISSCC 1998
