Conference paperReduction of random telegraph noise in high-κ / metal-gate stacks for 22 nm generation FETsN. Tega, H. Miki, et al.IEDM 2009
Conference paperMonte carlo simulations of p- And n-channel dual-gate Si MOSFETs at the limits of scalingD.J. Frank, S.E. Laux, et al.Device Research Conference 1993
Conference paperMeasurements of inter-and-intra device transient thermal transport on SOI FETsP. Solomon, M. Shamsa, et al.IEDM 2007
Conference paperExperimental and theoretical explanation for the orientation dependence gate-induced drain leakage in scaled MOSFETsP. Solomon, S.E. Laux, et al.DRC 2009
