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Conference paperA self-aligned silicide process utilizing ion implants for reduced silicon consumption and control of the silicide formation temperatureG.M. Cohen, C. Cabral Jr., et al.MRS Proceedings 2002
Conference paperDevice design considerations for double-gate, ground-plane, and single-gated ultra-thin SOI MOSFET's at the 25 nm channel length generationH.-S. Wong, David J. Franks, et al.IEDM 1998
PaperThe thermodynamics of a charged fermion layer at high rs valuesS. Shapira, U. Sivan, et al.Surface Science
