The DX centre
T.N. Morgan
Semiconductor Science and Technology
Scanning tunneling microscopy is a powerful tool for the study of surface structure. Information can be obtained by examining real-space structure within unit cells and by determining the registration of features relative to the positions of the bulk lattice. Techniques for image enhancement, distortion correction, and registration determination are described and illustrated for structural studies of the (V3xV3 l)R 30° Ag/Si(111) surface. © 1988, American Vacuum Society. All rights reserved.
T.N. Morgan
Semiconductor Science and Technology
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997