Ultra-thin SOI CMOS using laser spike anneal
Zhibin Ren, J. Sleight, et al.
VLSI-TSA 2006
The effect of the implantation of silicon ions on the anomalous transient diffusion of ion-implanted boron is investigated. It is found that silicon ion fluences well below that necessary to amorphize the lattice substantially reduce the anomalous transient diffusion of subsequently implanted boron. The sheet resistance, however, is increased by the additional silicon implant. The implantation of silicon ions into activated boron layers causes additional anomalous diffusion at substantial distances beyond the range of the silicon ions. The anomalous motion is also reduced in regions where the damage is greater. The effects can be explained in terms of the generation of point defect clusters which dissolve during anneal and the sinking of point defects in the regions of high damage by the formation of interstitial type extended defects.
Zhibin Ren, J. Sleight, et al.
VLSI-TSA 2006
Alwin E. Michel, M.I. Nathan, et al.
Journal of Applied Physics
Huilong Zhu, Kam-Leung Lee, et al.
SISPAD 2002
Zhibin Ren, M. Ieong, et al.
IEDM 2005