Effect of plasma N2 and thermal NH3 nitridation in HfO2 for ultrathin equivalent oxide thickness
- Min Dai
- Yanfeng Wang
- et al.
- 2013
- Journal of Applied Physics
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48 results for Paul Ronsheim
Ultra-low emissivity alpha-particle detection
- Michael S. Gordon
- Kenneth P. Rodbell
- et al.
- 2012
- IEEE TNS
Probing the interface barriers of dopant-segregated silicide-Si diodes with internal photoemission
- Zhen Zhang
- Joanna Atkin
- et al.
- 2012
- IEEE T-ED
Modifications of growth of strained silicon and dopant activation in silicon by cryogenic ion implantation and recrystallization annealing
- Hiroshi Itokawa
- Nathaniel C. Beriiner
- et al.
- 2012
- IWJT 2012
Leakage and contact resistance reduction by diffusion of dopants in NiPt suicide
- Ahmet Ozcan
- Ming Cai
- et al.
- 2011
- ADMETA 2011
Pulsed-laser atom probe tomography of p-type field effect transistors on Si-on-insulator substrates
- S. Jin
- K.S. Jones
- et al.
- 2011
- Journal of Vacuum Science and Technology B
Leakage issues in failure analysis of P+ SiGe active area short monitor
- Ankur Arya
- Greg M. Johnson
- et al.
- 2011
- IPFA 2011
SIMS quantification of SiGe composition with low-energy ion beams
- Zhengmao Zhu
- Paul Ronsheim
- et al.
- 2011
- Surface and Interface Analysis
Suppression of boron diffusion in deep submicron devices
- Michael A. Gribelyuk
- Phil Oldiges
- et al.
- 2011
- Journal of Vacuum Science and Technology B
Sub-20 nm abrupt USJ formation with long ms-flash with sub-2 nm dopant motion control
- Kam-Leung Lee
- Isaac Lauer
- et al.
- 2010
- IWJT 2010