Impurities in semimetals

M.Ya. Azbel

doi:10.1016/0038-1098(83)90590-2

Solid State Communications

Paper

01 Jan 1983

Impurities in semimetals

View publication

Abstract

Localization in semimetals and semiconductors strongly depends on the character of disorder. The resistance may decrease when the concentration of vacancies increases, and may be anomalously low for small size substitutions. © 1983.

Paper

(S)PEEC: Time- and Frequency-Domain Surface Formulation for Modeling Conductors and Dielectrics in Combined Circuit Electromagnetic Simulations

Dipanjan Gope, Albert E. Ruehli, et al.

IEEE T-MTT

Paper

Facet formation in strained Si_1-x Ge_x films

M.A. Lutz, R.M. Feenstra, et al.

Surface Science

Paper

Persistent spectral hole burning in deuterated (formula presented)

R.M. Macfarlane, R.L. Cone

Physical Review B - CMMP

Paper

Theory of temperature-induced Mott transitions

Ellen J. Yoffa, David Adler

Physical Review B

View all publications

Abstract

Related

(S)PEEC: Time- and Frequency-Domain Surface Formulation for Modeling Conductors and Dielectrics in Combined Circuit Electromagnetic Simulations

Facet formation in strained Si1-x Gex films

Persistent spectral hole burning in deuterated (formula presented)

Theory of temperature-induced Mott transitions

Facet formation in strained Si_1-x Ge_x films