K.L. Saenger, K.E. Fogel, et al.
Journal of Applied Physics
We have studied the dynamics of thermal relaxation of highly metastable films of SiGe/Si(100) in situ in the transmission electron microscope (TEM). This makes it possible to study the early stages of strain relaxation, and thus obtain information about the nucleation of dislocations. We find that, when care is taken not to introduce artifacts during sample preparation, relaxation occurs by the multiplication of "precursor dislocations" through a mechanism similar to the Frank-Read mechanism. An individual nucleation site is observed, confirming the model previously proposed.
K.L. Saenger, K.E. Fogel, et al.
Journal of Applied Physics
A. Topol, D.C. La Tulipe, et al.
IEDM 2005
K. Rim, S.J. Koester, et al.
VLSI Technology 2001
Zhen Zhang, F. Pagette, et al.
VLSI-TSA 2010