K. De Keyser, C. Van Bockstael, et al.
Electrochemical and Solid-State Letters
The morphological stability of NiSi is investigated when 40% of Si is mixed into an as deposited 10 nm Ni film. When annealing at 3 °C/s, scanning electron microscopy images and in situ sheet-resistance measurements show that NiSi agglomeration is delayed by more than 100 °C. In situ x-ray diffraction reveals that NiSi grows from an unusual transient hexagonal θ -nickel-silicide phase. The significant improvement of the NiSi film's morphological stability can be related to its microstructure, with large grains and a strong texture. This peculiar microstructure is compared to the microstructure of the θ -nickel-silicide precursor by electron backscattering diffraction and pole figures. © 2009 American Institute of Physics.
K. De Keyser, C. Van Bockstael, et al.
Electrochemical and Solid-State Letters
K. De Keyser, C. Van Bockstael, et al.
Applied Physics Letters
D. Deduytsche, C. Detavernier, et al.
Journal of Applied Physics
C. Van Bockstael, K. De Keyser, et al.
Journal of Applied Physics