Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
The electrical transport and magnetic properties of (La1-xSrx)FeO3-δ and (La1-xSrx)MnO3-δ single crystals were studied as a function of the dopant concentration x and the oxygen deficiency δ. Crystals were grown by the floating zone process and subjected to post-annealing treatments in oxidizing or reducing atmosphere to control δ. This two-step process allows the precise control of δ. Moreover, a wide range of δ values not attainable by changing only the growth conditions can thus be studied. Controlling the Fe and Mn valencies via the oxygen deficiency was found to affect the magnetic and electrical properties profoundly.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020