E.A. Giess, Gerald Burns, et al.
Applied Physics Letters
The crystallization and amorphization of Te-As-Ge films with GaAs injection lasers has been investigated. Power density measurements for crystallization and amorphization are presented, and a reversemode write-read-erase cycle is demonstrated. The results show that direct bit storage is feasible with an injection laser-chalcogenide film system. © 1974 Optical Society of America.
E.A. Giess, Gerald Burns, et al.
Applied Physics Letters
P.G. McMullin, J.M. Blum, et al.
IEEE JQE
A.W. Smith
Applied Physics Letters
Gerald Burns, A.W. Smith
IEEE JQE