William M. J. Green, Solomon Assefa, et al.
IPRSN 2011
A waveguide-integrated Germanium avalanche photodetector with gain-bandwidth-product of 350GHz, sensitivity improvement of 6dB, and excess noise with keff ∼ 0.2 was demonstrated while operating with 12dB gain at around 3V bias voltage. The photodetector has capacitance of 10±2fF and operates at 40Gbps. Monolithic integration of thin single-crystalline Ge into front-end CMOS stack was achieved by rapid melt growth during source-drain implant activation anneal. ©The Electrochemical Society.
William M. J. Green, Solomon Assefa, et al.
IPRSN 2011
Folkert Horst, William M. J. Green, et al.
OECC 2011
Fengnian Xia, Martin O'Boyle, et al.
OFC/NFOEC 2007
Michael L. Cooper, Greeshma Gupta, et al.
CLEO/QELS 2010