Conference paper

INTERACTION OF FLUORINE COMPOUNDS WITH TUNGSTEN AND SILICON.

Abstract

A modulated beam mass-spectrometer system, which has been developed to obtain information about the mechanisms of etching reactions, is described. Experimental results for the reaction of XeF//2 with W(111) and silicon are presented. Implications for etching mechanisms of the experimentally determined etch product distributions, reaction probabilities and ion bombardment effects are discussed.

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