Vladimir Dubrovskii, Yury Berdnikov, et al.
Crystal Growth and Design
We report on the influence of doping on the band-edge abruptness of InAs/GaSb p-n and p-i-n tunnel diodes. Understanding and fabrication of a well-defined and sharp band edge is mandatory for tunnel FET operation. InAs/GaSb nanowire junctions were selectively grown by metal organic chemical vapor deposition (MOCVD) on silicon-on-insulator (SOI) substrates using template assisted selective epitaxy (TASE) [1]. The junctions were analyzed by scanning transmission electron microscope (STEM) showing an abrupt interface. Current-voltage measurements and conductance slope (S) analysis [2] were conducted at various temperatures. We find that (S) of tunnel diodes exhibits a temperature dependence due to trapping and de-trapping of carriers at the junction and, importantly, that high doping of p-n junctions results in steeper slopes compared to p-i-n diodes. This finding suggests that electronic states from doping impurities play a minor role in S degradation. The presence of doping independent traps at the hetero-interface still results in > 60mV/dec steepness which needs continuous investigations for subthermal device operation of tunnel FETs.
Vladimir Dubrovskii, Yury Berdnikov, et al.
Crystal Growth and Design
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Noelia Vico Triviño, Philipp Staudinger, et al.
PVLED 2019
Svenja Mauthe, Philipp Staudinger, et al.
CLEO 2019