A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
- Herwig Hahn
- Veeresh Deshpande
- et al.
- 2017
- IEDM 2017
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12 results for Antonis Olziersky
Advanced 3D Monolithic hybrid CMOS with Sub-50 nm gate inverters featuring replacement metal gate (RMG)-InGaAs nFETs on SiGe-OI Fin pFETs
- Veeresh Deshpande
- V. Djara
- et al.
- 2015
- IEDM 2015
Edge Contacts to Atomically Precise Graphene Nanoribbons
- Wenhao Huang
- Oliver Braun
- et al.
- 2023
- ACS Nano
Comparison of charge dissipation layers and dose sensitivity of PMMA electron beam lithography on transparent insulating substrates such as GaN
- A. Hambitzer
- Antonis Olziersky
- et al.
- 2017
- CS MANTECH 2017
Fabrication of NEMS actuated plasmonic antenna platform for the study of optical forces and field enhancements in hot-spots
- L. Herrmann
- Antonis Olziersky
- et al.
- 2016
- ACPC 2016
Investigation of doping in InAs/GaSb hetero-junctions for tunnel-FETs
- D. Cutaia
- Heinz Schmid
- et al.
- 2016
- SNW 2016
Complementary III-V heterojunction lateral NW Tunnel FET technology on Si
- D. Cutaia
- Kirsten E. Moselund
- et al.
- 2016
- VLSI Technology 2016
Fabrication of bow-tie antennas with mechanically tunable gap sizes below 5 nm for single-molecule emission and Raman scattering
- Cynthia Gruber
- L. Herrmann
- et al.
- 2015
- NANO 2015
Crossbar operation of BiFeO3/Ce–CaMnO3 ferroelectric tunnel junctions: From materials to integration
- Mattia Halter
- Elisabetta Morabito
- et al.
- 2023
- Journal of Materials Research
Tunable Quantum Dots from Atomically Precise Graphene Nanoribbons Using a Multi-Gate Architecture
- Jian Zhang
- Oliver Braun
- et al.
- 2023
- Advanced Electronic Materials