S.J. Wind, Y. Taur, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Arsenic dopant profile motion in ion implanted Si samples annealed for a few seconds at 1100°C is adequately described by a model involving concentration enhanced diffusion. There is no evidence of an initial rapid diffusive transient. Diffusion in samples preannealed at 550°C is consistent with this result.
S.J. Wind, Y. Taur, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
E.J. Walker, Alwin E. Michel
Journal of Applied Physics
M.I. Nathan, T.N. Morgan, et al.
Physical Review
J.N. Burghartz, D.A. Grützmacher, et al.
VLSI Technology 1993