J.E.E. Baglin, R.T. Hodgson, et al.
Nuclear Instruments and Methods
We show that the Rutherford backscattering yield from [100] InAs-GaSb superlattices has a marked oscillatory structure indicative of the superlattice periodicity. Channeling measurements reveal higher dechanneling along 〈110〉 than along [100] directions, and this can be interpreted as an evidence for relaxation effects along the [100] growth direction at each InAs-GaSb interface. We attribute this to the fact that, although there is a good lattice match between InAs and GaSb, the interfaces consist of either Ga-As or In-Sb bonds, which differ by 7% in binding distance from InAs-GaSb.
J.E.E. Baglin, R.T. Hodgson, et al.
Nuclear Instruments and Methods
G.A. Sai-Halasz, L.L. Chang, et al.
Solid State Communications
C.A. Chang, E. Mendez, et al.
Surface Science
W.K. Chu, C.K. Pan, et al.
Physical Review B