Ion Implantation Doping of Si with 70 to 300 keV B. P. and As

Paper

01 Jan 1968

Abstract

No abstract available.

Conference paper

Albert J. Blodgett, B.L. Crowder

International Electronic Manufacturing Technology Symposium 1987

Paper

J.C. Tsang, M.W. Shafer, et al.

Physical Review B

Paper

F.F. Morehead, B.L. Crowder

Radiation Effects

Paper

N.J. Chou, B.L. Crowder

Journal of Applied Physics